We have studied the low-temperature photoluminescence of the two-dimensiona
l electron gas in a single GaAs quantum well in magnetic fields up to 50 T
over four orders of magnitude of illumination intensity. At the very highes
t illumination powers, where the recombination is excitonic at zero field,
we find that the binding energy of both the singlet and triplet states of t
he negatively charged exciton (X-) increase monotonically with the applied
field above 15 T. This contradicts recent calculations for X-, but is in ag
reement with adapted calculations for the binding energy of negative-donor
centers. At low-laser powers we observe a strong transfer of luminescence i
ntensity from the singlet (ground) state to the tripler (excited) state as
the temperature is reduced below 1 K. This is attributed to the spin polari
zation of the two-dimensional electron gas by the applied magnetic field. [
S0163-1829(99)01104-2].