Photoluminescence of negatively charged excitons in high magnetic fields

Citation
M. Hayne et al., Photoluminescence of negatively charged excitons in high magnetic fields, PHYS REV B, 59(4), 1999, pp. 2927-2931
Citations number
25
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B-CONDENSED MATTER
ISSN journal
01631829 → ACNP
Volume
59
Issue
4
Year of publication
1999
Pages
2927 - 2931
Database
ISI
SICI code
0163-1829(19990115)59:4<2927:PONCEI>2.0.ZU;2-4
Abstract
We have studied the low-temperature photoluminescence of the two-dimensiona l electron gas in a single GaAs quantum well in magnetic fields up to 50 T over four orders of magnitude of illumination intensity. At the very highes t illumination powers, where the recombination is excitonic at zero field, we find that the binding energy of both the singlet and triplet states of t he negatively charged exciton (X-) increase monotonically with the applied field above 15 T. This contradicts recent calculations for X-, but is in ag reement with adapted calculations for the binding energy of negative-donor centers. At low-laser powers we observe a strong transfer of luminescence i ntensity from the singlet (ground) state to the tripler (excited) state as the temperature is reduced below 1 K. This is attributed to the spin polari zation of the two-dimensional electron gas by the applied magnetic field. [ S0163-1829(99)01104-2].