Degenerate four-wave mixing in semiconductor-doped glasses below the absorption edge

Citation
Ks. Bindra et al., Degenerate four-wave mixing in semiconductor-doped glasses below the absorption edge, PHYS REV B, 59(4), 1999, pp. 2968-2974
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B-CONDENSED MATTER
ISSN journal
01631829 → ACNP
Volume
59
Issue
4
Year of publication
1999
Pages
2968 - 2974
Database
ISI
SICI code
0163-1829(19990115)59:4<2968:DFMISG>2.0.ZU;2-5
Abstract
We report measurements of degenerate four-wave-mixing reflectivity at a fre quency below the band gap of semiconductor-doped glasses in the intensity r ange 0.5-10 GW/cm(2) Up to intensities similar to 2.5 GW/cm(2), the conjuga te reflectivity varies like the fourth power of intensity signifying a fift h-order nonlinearity due to band filling by two-photon absorption. Surprisi ngly, at a higher intensity range the conjugate signal showed a cubic depen dence on the pump intensity, which is typical of the chi((3)) process. We s how that: this cubic dependence does not necessarily indicate a third-order process as usually assumed. Instead, it is shown to arise due to a reducti on of the effective intensity by nonlinear absorption of the interacting be ams. [S0163-1829(99)01902-5].