Structural reordering and electrical activation of ion-implanted GaAs and InP due to laser annealing in a controlled atmosphere

The effects of the ambient atmosphere in the annealing chamber on the elect rical and structural characteristics of Zn-implanted m-V compound semicondu ctors, processed by low-power pulsed-laser annealing are presented. The sam ples were analyzed using several complementary experimental techniques: Ref lection high-energy electron diffraction, Rutherford backscattering spectro scopy, Raman spectroscopy, secondary ion mass spectroscopy, and electrical measurements. During the laser beam irradiation in the presence of gas inle t into the annealing chamber the ambient gas atoms diffused well into the t arget changing the stoichiometry and the electrical parameters; Redistribut ion of the implanted impurity was also observed. By varying the type of gas used and its pressure, it was possible to achieve electrical activation of up to 80%. It seems all structure and electrical parameters achieve their best values at the same ambient atmosphere and density of the deposited las er power P, e.g., 1.5 atm of N-2 and P = 6.5 MW/cm(2) for InP. [S0163-1829( 99)12803-0].