Atomic origin of the Si core-level photoemission components in the C(2X2)Si-Cu(110) surface alloy

Citation
Ja. Martin-gago et al., Atomic origin of the Si core-level photoemission components in the C(2X2)Si-Cu(110) surface alloy, PHYS REV B, 59(4), 1999, pp. 3070-3074
Citations number
24
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B-CONDENSED MATTER
ISSN journal
01631829 → ACNP
Volume
59
Issue
4
Year of publication
1999
Pages
3070 - 3074
Database
ISI
SICI code
0163-1829(19990115)59:4<3070:AOOTSC>2.0.ZU;2-6
Abstract
High-resolution synchrotron-radiation photoemission spectroscopy has been u sed to investigate the Si 2p core-level peak of the c(2 x 2) Si-Cu(110) sur face alloy. In the photoemission spectrum several components can be clearly distinguished where only;one would be expected. In order to know the atomi c origin of these shifted components, we have correlated scanning tunnellin g microscope images to photoelectron-diffraction azimuthal scans on the shi fted peaks recorded at the same coverage. From this analysis insights about the mechanisms of the surface-alloy formation can be made. [S0163-1829(98) 05248-5].