The structural and electric behavior of SrBi2Ta2O9 ferroelectric thin films with H+ implantation

The structural and electrical characteristics of H+-implanted SrBi2Ta2O9 (S BT) ferroelectric thin films were investigated by X-ray diffraction analysi s and electrical measurements. 25 keV Ht with doses ranging from 1 x 10(14) /cm(2) to 3 x 10(15)/cm(2) were implanted into the Sol-Gel prepared SET fer roelectric thin films. The X-ray diffraction patterns of SET films show tha t no difference appears in the crystalline structure of H+-implanted SET fi lms compared with unimplanted films. Ferroelectric properties measurements indicate that both remnant polarization and the coercive electric field of H+-implanted SET films decrease with increasing the implantation dose. The disappearance of ferroelectricity was found in the H+-implanted SET films u p to a dose of 3 x 10(15)/cm(2). The leakage current-voltage (I-V) and capa citance-voltage (C-V) characteristics of the H+-implanted SET films were al so discussed before and after a recovery process. (C) 1999 Elsevier Science B.V.