High sp(3) content hydrogen-free amorphous diamond: an excellent electron field emission material

Details are given of a study of the characteristics of field-induced electr on emission from hydrogen-free high sp(3) content (>90%) amorphous diamond (a-D) film deposited on heavily doped (rho < 0.01 Ohm.cm) n-type monocrysta lline Si (111) substrate. It is demonstrated that a-D film has excellent el ectron field emission properties. The emission current can reach 0.9 mu A a t applied field as low as 1 V/mu m, and the emission current density can be about several mA/cm(2) under 20 V/mu m. The emission current is stable whe n the beginning current is at 50 mu A within 72 h. Uniform fluorescence dis play,of electron emission from the whole face of the a-D film under the ele ctric field of 10-12 V/mu m is also observed. The contribution of excellent electron emission property results from the smooth, uniform, amorphous sur face and high sp(3) content of the a-D film.