Surface gap and surface electronic states in CuGeO3 single crystal

Citation
V. Corradini et al., Surface gap and surface electronic states in CuGeO3 single crystal, SURF SCI, 420(2-3), 1999, pp. 142-147
Citations number
26
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
SURFACE SCIENCE
ISSN journal
00396028 → ACNP
Volume
420
Issue
2-3
Year of publication
1999
Pages
142 - 147
Database
ISI
SICI code
0039-6028(19990120)420:2-3<142:SGASES>2.0.ZU;2-0
Abstract
The surface and bulk electronic excitations of CuGeO3 are investigated by m eans of electron energy loss and polarized X-ray absorption spectroscopy. C uGeO3 shows a surface charge transfer gap of about 3.0+/-0.3 eV. The unoccu pied oxygen derived density of states, as probed by X-ray absorption at the O 1s edge, is in good agreement with recent many-body calculations. (C) 19 99 Elsevier Science B.V. All rights reserved.