The combination of the electronic and optical properties of a semicond
uctor hetero-junction and the acoustic properties of a piezoelectric s
ubstrate material yields a new class of very promising hybrids for pot
ential acousto-electric and acousto-optic applications. LiNbO3/GaAs hy
brids have been fabricated using the epitaxial lift-off technique resu
lting in unusually large acousto-electric and acousto-optic interactio
n between the quasi two-dimensional electron system in the semiconduct
or and surface acoustic waves on the piezoelectric substrate. Field ef
fect tunability of the interaction at room temperature is demonstrated
and possible device applications are discussed. Photoluminescence mea
surements show the influence of the acousto-electric fields on the opt
ical properties of quantum well structures. (C) 1997 American Institut
e of Physics.