EXTENDED X-RAY-ABSORPTION FINE-STRUCTURE STUDY OF ALXGA(1-X)N FILMS

Extended x-ray absorption fine structure above the Ga-K edge has been used to study the local structure of AlxGal-xN films grown by metal or ganic chemical vapor deposition. With increasing Al content, x, the Ga -N bond length decreases, but much less than the average bond length. On the other hand, the x dependence of the Ga-Ga and Ga-Al distances d oes follow the variation of the average cation-cation distance. We con clude that bond angle distortions accommodate the differences between the Ga-N and Al-N bond lengths. (C) 1997 American Institute of Physics .