J. Koga et A. Toriumi, NEGATIVE DIFFERENTIAL CONDUCTANCE AT ROOM-TEMPERATURE IN 3-TERMINAL SILICON SURFACE JUNCTION TUNNELING DEVICE, Applied physics letters, 70(16), 1997, pp. 2138-2140
Negative differential conductance based on forward biased band-to-band
tunneling is demonstrated at room temperature in a three-terminal sil
icon surface junction tunneling device. The device is fabricated on si
licon dioxide to achieve an extremely small bulk leakage current toget
her with a sharp drain impurity profile. A new device structure, in wh
ich the active tunneling junction is away from the field isolation, is
also employed to totally eliminate excess tunneling current at the fi
eld oxide corner. It is observed that the tunneling current is largely
controlled by the gate bias which modulates the tunneling distance. T
his functional device can be easily implemented into the fabrication p
rocess for silicon ultralarge scale integrated circuits, and is expect
ed to be a useful post complementary metal-oxide-semiconductor device
in future silicon technology. (C) 1997 American Institute of Physics.