FULL BAND MONTE-CARLO INVESTIGATION OF ELECTRON-TRANSPORT IN STRAINEDSI GROWN ON SI1-XGEX SUBSTRATES

Authors
BUFLER FM GRAF P KEITH S MEINERZHAGEN B
Citation
Fm. Bufler et al., FULL BAND MONTE-CARLO INVESTIGATION OF ELECTRON-TRANSPORT IN STRAINEDSI GROWN ON SI1-XGEX SUBSTRATES, Applied physics letters, 70(16), 1997, pp. 2144-2146
Citations number
17
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
70
Issue
16
Year of publication
1997
Pages
2144 - 2146
Database
ISI
SICI code
0003-6951(1997)70:16<2144:FBMIOE>2.0.ZU;2-X
Abstract
In-plane drift velocities determined by full band Monte Carlo simulati ons and drift mobility calculations are reported for electrons in stra ined Si grown on Si1-xGex substrates up to x=0.4 at 77 and 300 K. Drif t mobilities of 28200 cm(2)/(V s) at 77 K and 2230 cm(2)/(V s) at 300 K are found for x=0.3. Strain enhances the drift velocity significantl y only below electric fields of about 50 kV/cm. At 77 K the Gunn effec t is predicted to occur above 15 kV/cm. (C) 1997 American Institute of Physics.