The annihilation process of large 1/6 < 301 > stacking faults in melt
textured YBa2Cu3O7-x is in situ monitored in the transmission electron
microscope. The process is activated at the onset of the orthorhombic
to tetragonal transition induced in the electron microscope, thus evi
dencing the instability of such defects in the deoxygenated YBa2Cu3O7-
x matrix. The observations suggest that the annihilation (and growth)
process is limited by surface diffusion along Y2BaCuO5/YBa2Cu3O7-x int
erfaces. The propagation mechanism of such stacking faults is addresse
d in the light of the present findings. (C) 1997 American Institute of
Physics.