Effect of ion mass on the evolution of extended defects during annealing of MeV ion-implanted p-type Si

Evolution of extended defects during annealing of MeV ion-implanted p-type Si has been characterized using deep level transient spectroscopy and trans mission electron microscopy. The p-type Si was implanted with Si, Ge, and S n ions with varying energies and doses from 5 x 10(12) to 1 x 10(14) cm(-2) then annealed at 800 degrees C for 15 min. For all implanted species, the critical dose for transformation from point to extended defects has been de termined. The type of extended defects formed depends upon the mass of the implanted species even though the dose was adjusted to create a similar dam age distribution for all implanted species. (C) 1999 American Institute of Physics. [S0003-6951(99)02408- 0].