Sub-40 nm PtSi Schottky source/drain metal-oxide-semiconductor field-effect transistors

PtSi source/drain p-type metal-oxide-semiconductor field-effect transistors (MOSFETs) have been fabricated at sub-40 nm channel lengths with 19 Angstr om gate oxide. These devices employ gate-induced field emission through the PtSi similar to 0.2 eV hole barrier to achieve current drives of similar t o 350 mu A/mu m at 1.2 V supply. Delay times estimated by the CV/I metric e xtend scaling trends of conventional p-MOSFETs to similar to 2 ps. Thermal emission limits on/off current ratios to similar to 20-50 in undoped device s at 300 K, while ratios of similar to 10(7) are measured at 77 K. Off-stat e leakage can be reduced by implanting a thin layer of fully depleted donor s beneath the active region to augment the Schottky barrier height or by us e of ultrathin silicon-on-insulator substrates. (C) 1999 American Institute of Physics. [S0003-6951(99)00508-2].