Effect of target modification on deposition rates of hexaphenyldisilane bylaser ablation

Citation
Xy. Zeng et al., Effect of target modification on deposition rates of hexaphenyldisilane bylaser ablation, APPL SURF S, 140(1-2), 1999, pp. 90-98
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
APPLIED SURFACE SCIENCE
ISSN journal
01694332 → ACNP
Volume
140
Issue
1-2
Year of publication
1999
Pages
90 - 98
Database
ISI
SICI code
0169-4332(199902)140:1-2<90:EOTMOD>2.0.ZU;2-D
Abstract
The effects of target modification on film deposition rates of hexaphenyldi silane (HPDS) due to ablution by a 248-nm KrF excimer laser at different fl uences and repetition rates were studied. When the repetition rate was less than 20 Hz and the laser fluence was below 100 mJ/cm(2), some interlocked cones were generated on the surface of the HPDS targets, which caused the l aser ablative process to grind to a halt after a given number of laser puls es. However, when the repetition rates exceeded 20 Hz, it was possible to p revent the cones from being interlocked, so that the laser ablative process or film deposition process could continue, even though a similar laser flu ence was used. The doping of other Si-based organic materials into HPDS aff ected the critical laser fluences and repetition rates below which the inte rlocked cones were generated. Finally, a general physical model of the targ et modification for laser ablation of Si-based organic materials was sugges ted based on the laser processing parameters. (C) 1999 Elsevier Science B.V . All rights reserved.