Utilisation of Cu(hfac) tmvs precursor gas in LCVD integrated circuit repair system

Various techniques have been developed to carry out integrated circuit repa irs during IC prototyping. Focused ion beam (FIB) etching and deposition is , for the time being, the most powerful and versatile tool for multilevel I C modification and failure analysis but a long distance conductor line depo sition with an acceptable electrical resistance is time consuming. Laser ch emical vapor deposition (LCVD) does not have such a high accuracy but the b ulk resistivity metal deposition over large areas and long distances is car ried out in seconds. in this work LCVD, of copper from Cu(hcfac)tmvs is sho wn to be applicable for actual integrated circuit repair work in special ca ses. During Cu deposition the precursor container was heated to a temperatu re of 39 degrees C resulting in 0.33 mbar partial pressure in the chamber. A typical flow rate of hydrogen carrier gas and Cu(hfac)tmvs precursor was set to 2.0 seem and the total pressure in the chamber was adjusted between 5 to 10 mbar. An Ar+ laser, employing mainly the peaks at 488 nm and 515 nm , was utilised with a scan speed of 24 mu m/s. The resistivity of the depos ited lines was found to be 2.7 mu Ohm cm. Examples including long distance signal rewires, probing and bonding pad copper deposition are presented in this paper. The deposition morphology and chemical contents of the deposite d lines are studied by AFM and LIMA measurements. (C) 1999 Elsevier Science B.V. All rights reserved.