Plasma immersion ion implantation for shallow junctions in silicon

Low cost and low voltage (<1 keV) Plasma Immersion Ion Implantation (PIII) for acceptor and donor doping was studied from RF plasmas of 1% PH3-H-2 and 1% B2H6-H-2 and gas mixtures, respectively. Conventional annealing and Rap id Thermal Processing (RTP) were applied for the activation of the dopants forming junction depths in 0.1-0.215 mu m range. The level of the co-implan ted metal concentration was determined by Rutherford Backscattering Spectro metry and Deep Level Transient Spectroscopy (DLTS) technique and found lowe r than 1 x 10(11) ion/cm(3). The effects of PIII on the lifetime of carrier s were followed by lifetime mapping. The lifetime degradation caused by Pil l of medium duration was comparable with the effect of conventional doping processes. (C) 1999 Elsevier Science B.V. All rights reserved.