FeNy films with a nitrogen content of nearly 50 at.% (y approximate to 1) w
ere prepared by reactive magnetron sputtering. Their properties were studie
d as a function of several sputtering parameters (gas-flow rates, substrate
temperature and bias voltage), using ion-beam analytical methods, Mossbaue
r spectroscopy as well as transmission electron microscopy (TEM) and X-ray
diffraction (XRD). In order to highlight the role of light contaminant elem
ents (H,C,O) in the production of single-phase cubic FeN films, the concent
ration profiles of all the elements of the films were measured by Time of F
light Elastic Recoil Detection Analysis (TOF-ERDA). (C) 1999 Elsevier Scien
ce B.V. All rights reserved.