Growth of tantalum pentoxide film by pulsed laser deposition

Citation
Jy. Zhang et al., Growth of tantalum pentoxide film by pulsed laser deposition, APPL SURF S, 139, 1999, pp. 320-324
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
APPLIED SURFACE SCIENCE
ISSN journal
01694332 → ACNP
Volume
139
Year of publication
1999
Pages
320 - 324
Database
ISI
SICI code
0169-4332(199901)139:<320:GOTPFB>2.0.ZU;2-M
Abstract
Thin films of Ta2O5 have been deposited on quartz and silicon substrates by 532-nm (Nd:YAG) pulsed laser deposition (PLD) in various O-2 as environmen ts. The influence of the deposition parameters, such as oxygen pressure, su bstrate temperature and annealing under UV irradiation using a 172-nm excim er lamp, on the properties of the grown films, has been studied. The refrac tive index of the films increases with increasing pressure of O-2. X-ray di ffraction measurements show that the as-deposited films are amorphous at te mperatures below 500 degrees C and possess orthorhombic (beta-Ta2O5) crysta l structure at temperatures above 600 degrees C. The optical properties det ermined by UV spectrophotometry also strongly depend on the deposition para meters. At O-2 pressures above 0.15 mbar, the refractive index of the films was about 2.12 which is close to the bulk Ta2O5 value of 2.2. Optical tran smittance around 85% in the visible region of the spectrum was obtained at an oxygen pressure of 0.2 mbar, (C) 1999 Elsevier Science B.V. All rights r eserved.