Modeling and dynamic simulation of ultraviolet induced growing interfaces

A solid-on-solid (SOS) model to simulate SiN:H dynamic surface characterist ics in ultraviolet chemical vapor deposition (CVD) onto indium phosphide is presented. It is recognized that the nucleation process occurs at an UV in duced active charged center on the surface of the substrate. Photolysis rat es are determined using bond dissociation energies for molecular processes to generate active adsorbed species. The microscopic activation energy in e lementary processes depends on the configuration of neighbouring atoms, Mon te Carlo-Metropolis method using microscopic activation energy barriers is taken into account in molecular processes by a three-dimensional algorithm. The model includes lattice coordination and atom-atom interactions out to third-nearest neighbours. The molecular events are chosen with a probabilit y of occurrence that depends on the kinetic rates at each atomic site. Stab le incorporation of main species is enabled. Three-dimensional simulation o f a growing interface indicates validation of a thermally activated rough-s mooth transition for submicronic thick layers in the Kardar-Parisi-Zhang mo del. (C) 1999 Elsevier Science B.V. All rights reserved.