DUV laser-induced deposition of a-C : H from CH2I2 at room temperature

Amorphous carbon films have been deposited at room temperature by photolyti c dissociation of CH2I2. An Ar+ cw laser operating at 275-305 nm (DUV) was used as the excitation source. The laser beam was focused parallel to the S i(100) substrate surface. The deposition process was investigated as a func tion of laser power, gas flow rate, laser-beam-to-substrate distance and ga s pressure. The deposits were analysed by micro Raman spectroscopy, atomic force microscopy, energy dispersive X-ray spectroscopy and elastic recoil d etection analysis. (C) 1999 Elsevier Science B.V. All rights reserved.