Enhancement of diamond nucleation on silicon substrates in pulsed laser assisted hot filament CVD

Authors
Wang, Q Schliesing, R Zacharias, H Buck, V
Citation
Q. Wang et al., Enhancement of diamond nucleation on silicon substrates in pulsed laser assisted hot filament CVD, APPL SURF S, 139, 1999, pp. 429-433
Citations number
19
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
APPLIED SURFACE SCIENCE
ISSN journal
01694332 → ACNP
Volume
139
Year of publication
1999
Pages
429 - 433
Database
ISI
SICI code
0169-4332(199901)139:<429:EODNOS>2.0.ZU;2-D
Abstract
In hot-filament chemical vapour deposition, diamond nucleation on untreated silicon substrates has been enhanced by pulsed laser radiation. The effect of laser intensity on the diamond nucleation density was investigated. Wit h laser irradiation, the diamond nucleation was enhanced by a factor 8, and taking the dwell time of the laser into account by a factor of 5 x 10(4). The temporal distribution and maximum value of the surface temperature rise were calculated for a triangular laser pulse shape in order to assess the influence of pyrolysis on laser enhanced diamond nucleation. (C) 1999 Elsev ier Science B.V. All rights reserved.