The use of liquid precursors in plasmachemical technology of obtaining a-SiC : H thin films

The analysis of experimental data has shown promise of our technological ap proach in obtaining hydrogenated amorphous silicon carbide films (a-SiC:H). The a-SiC:H films have been received by a plasmachemical decomposition of CH3SiCl3 steams, in the plasma of radio frequency (RF)-discharge. The negat ive potential is supplied on a substrate. For obtaining n-conductivity, the nitrogen was added in a gas mixture. For p-conductivity, BCl3 steams were entered which were decomposed in the plasma. On the basis of the theoretica l calculation of a-SiC by the recursion method of Haydock, it suggested the mechanism of influence of amorphouzation and hydrogenation on the electron ic structure of the silicon carbide that is necessary for understanding the physics of the process of hydrogenation of amorphous thin films. (C) 1999 Elsevier Science B.V. AU rights reserved.