PLD of HgCdTe on two kinds of Si substrate

Films of HgCdTe have been obtained by pulse laser deposition method in dyna mic vacuum (pressure similar to 10(-6) Ton) at 293-543 K. Two different kin ds of Si surface were used as substrate: (a) flat standard polished (100) s urface and (b) anisotropically chemically etched patterned surface. The res ults of a scanning electron microscopy investigation, electron probe microa nalysis and I-V characteristic measurements showed a strong influence of th e substrate kind on the morphology, composition, growth mode, growth defect s and transport of HgCdTe/Si heterostructure. (C) 1999 Elsevier Science B.V . All rights reserved.