Reactive pulsed laser ablation and deposition of thin indium tin oxide films for solid state compact sensors

Authors
Teghil, R Marotta, V Guidoni, AG Di Palma, TM Flamini, C
Citation
R. Teghil et al., Reactive pulsed laser ablation and deposition of thin indium tin oxide films for solid state compact sensors, APPL SURF S, 139, 1999, pp. 522-526
Citations number
7
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
APPLIED SURFACE SCIENCE
ISSN journal
01694332 → ACNP
Volume
139
Year of publication
1999
Pages
522 - 526
Database
ISI
SICI code
0169-4332(199901)139:<522:RPLAAD>2.0.ZU;2-J
Abstract
Thin indium tin oxide (TTO) films have been deposited on Si (100) substrate s by laser ablating pure metals in oxygen atmosphere. The ablation has been carried out by a frequency doubled Nd:YAC laser and the oxygen pressure ha s been varied between 50 and 500 Pa. The substrate temperature has been var ied from 25 to 700 degrees C. The gaseous phase has been studied by mass sp ectrometry and fast ICCD imaging. The deposited films have been analysed by X-ray diffraction, scanning electron microscopy and electric resistance me asurements. (C) 1999 Elsevier Science B.V. All rights reserved.