Transparent and conductive thin layers of TiN have been grown on Coming gla
ss and silicon substrates by the reactive pulsed laser deposition method. A
n excimer laser(KrF, lambda = 248 nm, 4.0 J/cm(2)) was used to ablate a mas
sive, metallic Ti target in a N-2 atmosphere. Under optimised conditions, c
ontinuous polycrystalline films of fee TiN exhibiting a lattice parameter a
= 0.4242 nm very close to the bulk value, an optical transmittance higher
than 70% in the 350-1100 nm range, a flat morphology and an electrical cond
uctivity around 550 mu Omega cm have been deposited at a substrate temperat
ure of only 400 degrees C, The grown films also posses a good chemical and
wear resistance as their properties have not changed after exposure to the
ambient atmosphere for 6 months. (C) 1999 Elsevier Science B.V. All rights
reserved.