Citation
Lf. Kirpichnikova et al., A study of dielectric properties of partly deuterated and doped DMAAS crystals at low temperatures, CRYSTALLO R, 44(1), 1999, pp. 106-108
Citations number
15
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
CRYSTALLOGRAPHY REPORTS
ISSN journal
10637745
→ ACNP
Volume
44
Issue
1
Year of publication
1999
Pages
106 - 108
Database
ISI
SICI code
1063-7745(199901/02)44:1<106:ASODPO>2.0.ZU;2-Y
Abstract
Dielectric parameters of partly deuterated and Cr3+ and VO2+-doped (0.1 mol
%) (CH3)(2)NH2Al(SO4)(2). 6H(2)O crystals are measured at low temperatures
down to 5 K. It is established that the point of the low-temperature phase
transition T = 75 K remains the same in the partial substitution of hydrog
en atoms by deuterium and doping with VO2+ interstitial dopant, Doping with
Cr3+ ions results in an increase of the temperature of the low-temperature
phase transition. It is also established that the dielectric constant exhi
bits an anomalous behavior at 30-55 K.