Behavior of low-temperature magnetoresistance in some LaMnO3-based compounds

Citation
Mk. Gubkin et al., Behavior of low-temperature magnetoresistance in some LaMnO3-based compounds, CRYSTALLO R, 44(1), 1999, pp. 124-129
Citations number
12
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
CRYSTALLOGRAPHY REPORTS
ISSN journal
10637745 → ACNP
Volume
44
Issue
1
Year of publication
1999
Pages
124 - 129
Database
ISI
SICI code
1063-7745(199901/02)44:1<124:BOLMIS>2.0.ZU;2-C
Abstract
Electrical, magnetic, galvanomagnetic, and electron microscopy studies of L a0.9Ce0.1MnO3+delta, LaMnO3+delta, and La0.5Na0.2Bi0.3MnO3+delta ceramics h ave been performed. It is shown that the temperature dependence of resistiv ity for La0.9Ce0.1MnO3+delta has two peaks. The peak observed at a lower te mperature does not correspond to the Curie temperature T-C and, thus, can h ardly be attributed to magnetic order in the material. Below T-C, magnetiza tion in the fields lower than 3 kOe is almost independent of temperature be cause of a strong effect of the internal demagnetizing field on the magneti zation process. It is revealed that below T-C the absolute value of magneto resistance Delta rho is almost independent of temperature. An assumption is made about the dominant contribution of the carrier scattering by fluctuat ions of the electrostatic potential at grain boundaries into the low-temper ature magnetoresistance.