High power CW output from low confinement asymmetric structure diode laser

Authors
Iordache, G Buda, M Acket, GA van de Roer, TG Kaufmann, LMF Karouta, F Jagadish, C Tan, HH
Citation
G. Iordache et al., High power CW output from low confinement asymmetric structure diode laser, ELECTR LETT, 35(2), 1999, pp. 148-149
Citations number
4
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
35
Issue
2
Year of publication
1999
Pages
148 - 149
Database
ISI
SICI code
0013-5194(19990121)35:2<148:HPCOFL>2.0.ZU;2-F
Abstract
High power continuous wave output from diode lasers using low loss, low con finement, asymmetric structures is demonstrated. An asymmetric structure wi th an optical trap layer was grown by metal organic vapour phase epitaxy. G ain guided 50 mu m wide stripe 1-3 mm long diode lasers were studied. 1.8W of continuous wave optical power per uncoated facet was obtained at an inje ction current of 4.7A (36mW/mu m). The threshold current density is 270-400 A/cm(2).