High-precision neuron MOSFET structures

Authors
Rantala, A Franssila, S Kaski, K Lampinen, J Aberg, M Kuivalainen, P
Citation
A. Rantala et al., High-precision neuron MOSFET structures, ELECTR LETT, 35(2), 1999, pp. 155-157
Citations number
2
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
35
Issue
2
Year of publication
1999
Pages
155 - 157
Database
ISI
SICI code
0013-5194(19990121)35:2<155:HNMS>2.0.ZU;2-3
Abstract
Improved structures for neuron MOSFETs, which can execute a weighted summat ion of multiple input signals, are proposed and tested. Both an additional polysilicon shield and a substrate biasing show good control of the turning point of the neuron MOSFET inverters fabricated using a double poly-CMOS t echnology. The improved accuracy is demonstrated by fabricating A/D convert er circuits utilising the neuron MOSFETs.