MODELING MOS SNAPBACK AND PARASITIC BIPOLAR ACTION FOR CIRCUIT-LEVEL ESD AND HIGH-CURRENT SIMULATIONS

Authors
AMERASEKERA A CHANG MC DUVVURY C RAMASWAMY S
Citation
A. Amerasekera et al., MODELING MOS SNAPBACK AND PARASITIC BIPOLAR ACTION FOR CIRCUIT-LEVEL ESD AND HIGH-CURRENT SIMULATIONS, IEEE circuits and devices magazine, 13(2), 1997, pp. 7-10
Citations number
9
Categorie Soggetti
Instument & Instrumentation","Engineering, Eletrical & Electronic
Journal title
IEEE circuits and devices magazine → ACNP
ISSN journal
87553996
Volume
13
Issue
2
Year of publication
1997
Pages
7 - 10
Database
ISI
SICI code
8755-3996(1997)13:2<7:MMSAPB>2.0.ZU;2-L