Measurements of time-domain voltage/current waveforms at RF and microwave frequencies based on the use of a vector network analyzer for the characterization of nonlinear devices - Application to high-efficiency power amplifiers and frequency-multipliers optimization

Citation
D. Barataud et al., Measurements of time-domain voltage/current waveforms at RF and microwave frequencies based on the use of a vector network analyzer for the characterization of nonlinear devices - Application to high-efficiency power amplifiers and frequency-multipliers optimization, IEEE INSTR, 47(5), 1998, pp. 1259-1264
Citations number
10
Categorie Soggetti
Instrumentation & Measurement
Journal title
IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT
ISSN journal
00189456 → ACNP
Volume
47
Issue
5
Year of publication
1998
Pages
1259 - 1264
Database
ISI
SICI code
0018-9456(199810)47:5<1259:MOTVWA>2.0.ZU;2-I
Abstract
A new time-domain waveform measurement system based on the combination of a n harmonic source and load-pull setup with a modified vector network analyz er (VNA) is presented. It allows the visualization, the measurement, and th e optimization of high-frequency currents and voltages at both ports of non linear microwave devices. Measurements of GaAs field effect transistor (FET 's) and GaInP/GaAs heterojunction bipolar transistor (HBT's) at L-band were performed to demonstrate the great capabilities of the system, On one hand , voltage and current waveforms at both ports of transistors, working as po wer amplifiers, were optimized for maximum power-added efficiency. On the o ther hand, time-domain waveforms of transistors operating as frequency mult ipliers were optimized for maximum conversion gain. Such results prove the capabilities offered by this new nonlinear time-domain measurement system t o aid in designing optimized power amplifiers or frequency multipliers, The y also provide valuable information for nonlinear transistor model validati on.