Sensor properties of polycrystalline SnO2 films doped with Ni

Authors
Rumyantseva, MN Ryabova, LI Kuznetsova, TA Labeau, M Delabouglise, G Gask'ov, AM
Citation
Mn. Rumyantseva et al., Sensor properties of polycrystalline SnO2 films doped with Ni, INORG MATER, 35(1), 1999, pp. 54-59
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
INORGANIC MATERIALS
ISSN journal
00201685 → ACNP
Volume
35
Issue
1
Year of publication
1999
Pages
54 - 59
Database
ISI
SICI code
0020-1685(199901)35:1<54:SPOPSF>2.0.ZU;2-L
Abstract
The structure and electrical properties of polycrystalline SnO2 films doped with Ni and the influence of Ni doping on SnO2 sensitivity to trace amount s of CO, C2H5OH, CH4, and H2S in the atmosphere were studied. It was demons trated that the use of a two-temperature technique of measurements provides a considerable increase in gas sensitivity of SnO2(NiO) films.