Process technology for next generation photomask

Optical lithography will be extended to 0.13 mu m device generation even th ough other lithography methods have been developed and on-mask chrome struc tures must undergo a corresponding in size reduction. Therefore, the curren t photomask manufacturing technologies should be further developed in order to meet the requirements for rapidly shrinking devices geometries with inc reasing device densities. This requires the mass production of optical prox imity correction masks with quarter micron assist features and phase shift masks. Excellent linewidth control will also be required in the core of 6 i nch area. In this paper, a photomask process technology for making next gen eration photomask satisfying high resolution and good CD central requiremen ts has been described.