Challenges to 0.1 mu m resolution capability in ArF single layer resist process with weak resolution enhancement techniques

We examine the resolution capability of the ArF single layer resist process with weak resolution enhancement techniques. To do this, annular illuminat ion and an attenuated phase-shifting mask are applied to a high-resolution ArF single layer resist. Such weak resolution enhancement techniques are mo re widely applied than strong resolution enhancement techniques. The experi mentally obtained data are correlated with simulated aerial image contrasts to evaluate the lithographic performance under various optical conditions. The aerial image contrast is greatly enhanced by applying larger partial c oherence in annular illumination. It is quite effective, especially for fea tures smaller than 0.13 mu m lines and spaces. By applying the optimum cond ition in annular illumination, 0.10 mu m lines and spaces can be obtained e ven without using a phase-shifting mask. Furthermore? from the process marg in simulated with the measured resist dissolution rates, it is expected tha t the ArF single layer resist process with weak resolution enhancement can be applied in the fabrication of 0.1 mu m-rule devices.