Sub-0.1-mu m-pattern fabrication using a 193-nm top surface imaging (TSI) process

This paper presents a 193-nm top surface imaging (TSI) process for the sub- 0.10-mu m-device rule. The process achieved a 0.07-mu m contact hole, 0.04- mu m isolated line, and 0.06-mu m space pattern without the need for any op tical resolution enhancement technique. An exposure latitude of +/-10% was obtained for the process with a 0.10-mu m contact holt. We can obtain a suf ficient depth of focus (DOF) by using an attenuated phase-shifting mask. We resolved a 0.085-mu m line-and-space pattern by using an alternative phase -shifting mask, and obtained a 0.8-mu m DOF for a 0.09-mu m line-and-space pattern, using an alternative phase-shifting mask. We demonstrated the fabr ication of sub-0.10-mu m line-and-space binary patterns. Sub-0.10-mu m patt erns were produced by using the TSI process for 193-nm lithography.