Printing sub-100 nanometer features near-field photolithography

In this paper, a near-field photolithographic method which can realize ultr a high resolution beyond the diffraction limit of light is described. Evane scent light generated on a transparent mold with a micro-relief illuminated on the condition of total internal reflection is used to expose a photores ist in contact with the mold. The plastic replica mold is flexible to elimi nate the difficulty of close contact with the photoresist, and the replica mold damaged by the contact with the photoresist is disposable to maintain a high yield rate. We printed sub-100 nm features on a commercially availab le photoresist using 442-nm-wavelength light.