In this paper, a near-field photolithographic method which can realize ultr
a high resolution beyond the diffraction limit of light is described. Evane
scent light generated on a transparent mold with a micro-relief illuminated
on the condition of total internal reflection is used to expose a photores
ist in contact with the mold. The plastic replica mold is flexible to elimi
nate the difficulty of close contact with the photoresist, and the replica
mold damaged by the contact with the photoresist is disposable to maintain
a high yield rate. We printed sub-100 nm features on a commercially availab
le photoresist using 442-nm-wavelength light.