Application of a new empirical model to the electron beam lithography process with chemically amplified resists

We study on the simulation models and characteristics of a highly sensitive chemically amplified resist (CAR), which is used in the fabrication of dee p submicron pattern delineation. The main aim of this model is to express t he positive and negative CAR by using similar principles in acid generation . reaction and diffusion, reaction mechanism, and development. Profile simu lation uses the fitted parameters. Therefore; resist pattern shapes are in good agreement with the experimental ones. Simulation accuracy is 1.04% and 7.5%, for resist wail angle and critical dimension (CD) of CAR, respective ly. We also verify that components and properties of CAR determine the resi st profile and process mal;pin. Using this model, process feasibility of el ectron beam lithography is predicted, and accurate simulation is possible i n the deep submicron region.