Thin film growth and surface modification by keV ion beam

Citation
Sc. Choi et al., Thin film growth and surface modification by keV ion beam, JPN J A P 1, 37(12B), 1998, pp. 6984-6990
Citations number
19
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Volume
37
Issue
12B
Year of publication
1998
Pages
6984 - 6990
Database
ISI
SICI code
Abstract
High-quality ZnO film and highly wettable polymethylmethacrylate (PMMA) are obtained by using a keV inn beam. ZnO films are grown on glass substrates by ion beam sputter deposition. changing the oxygen/argon gas ratio, ion be am energy, and substrate temperature. Physical properties of ZnO films were investigated by X-ray diffraction, Rutherford backscattering spectroscopy, and the Van der Pauw method. All the films show a strong preferred orienta tion along the c-axis. The electrical resistivity is varied from 10(-3) to 10(6) Omega cm and its dependence on the deposition parameters is discussed . The PMMA surface was modified by the ion-assisted reaction technique. Ion dose, ion energy, and oxygen gas now rate are varied from 5 x 10(15) to 1 x 10(17) ions/cm(2), from 0.6 to 1.2 kV, and from 0 to 8 ml/min, respective ly. A highly wettable PMMA surface can be obtained by irradiating oxygen io ns in an oxygen gas environment. X-ray photoelectron spectroscopic analysis shows that hydrophilic groups are formed on the surface of PMMA.