Annealing and synchrotron radiation irradiation effects on hydrogen terminated Si(100) surfaces investigated by infrared reflection absorption spectroscopy

The structure of the H or D saturation adsorbed Si(100)1 x 1 surface genera ted at 400 K, and its change by annealing and synchrotron radiation (SR) ir radiation were investigated by infrared reflection absorption spectroscopy (IRRAS) using a CoSi2 buried metal layer (BML) substrate and reflection hig h-energy electron diffraction (RHEED) measurements. On 650 K annealing, the D saturation adsorbed Si(100)1 x 1 surface changes to 2 x 1 structure cons isting of only D-Si-Si-D, which gives rise to an SiD stretching vibration b and with a sharp, symmetric shape that peaked at around 1525 cm(-1). If the SR irradiation is added to the annealing of the D saturation adsorbed Si(1 00)1 x 1 surface, the shape of the SiD stretching vibration band at 1525 cm (-1) after 650 K annealing becomes broad and asymmetric. This is explained by the fact that D-Si-D is etched (desorbed) by the SR irradiation.