Bh. Choi et al., Electrical properties of electron-beam exposed silicon dioxides and their application to nano-devices, JPN J A P 1, 37(12B), 1998, pp. 6996-6997
Electrical properties of the electron-beam induced cal bon contamination la
yers have been reported. Contacts to the contamination layers are achieved
by a simple deposition of aluminum and the current-voltage characteristics
are successfully measured. A double junction structure, with the size small
er than 10 nm, has been fabricated by a one-step electron beam irradiation
and it exhibits Coulomb staircases at room temperature.