Electron beam doping in damageless regions of semiconductors by the kick out mechanism (interstitialcy and direct interstitial mechanism)

it is demonstrated that the interchange of impurity foreign atoms between s ubstitutional and interstitial sites occurring during the diffusion of impu rities in damage-free Si and GaAs due to the election hr am doping by super diffusion is controlled by the kick-out mechanism. Their diffusion profiles in semiconductors are in good agreement with the exact solution of Seeger' s theory of the kick-out diffusion.