Method for evaluating the interface of semiconductor heterojunctions usinga free electron laser

The method for evaluating the interface of semiconductor heterofunctions us ing the free electron laser internal photoemission (FEL-IPE) technique is p resented. The nature of the interface in semiconductor heterojunctions play s an important role for determining the behavior and performances of an ent ire class of nanosemiconductor devices, It is indicated that the measuremen t using FEL-IPE makes it possible to determine the band discontinuities of semiconductor heterojunctions more precisely.