A vibrating angular rate sensor is developed by the polysilicon surface mic
romachining process. The 7.0 mu m-thick polysilicon layer is deposited by l
ow-pressure chemical vapor deposition (LPCVD) and is suspended by sacrifici
al oxide wet etching after patterning by reactive ion etching. The angular
rate sensor uses angular resonance for the driving and sensing modes. The t
wo-degenerate sensing modes enable the sensor to detect the angular rare in
puts from each orthogonal substrate rotation. In view of cost and sizer one
sensor chip is preferable to two sensor chips orthogonally-configured for
the detection of two-input axis angular rate. The Coriolis motion arising f
rom the angular rate causes the capacitance change and is converted to volt
age change with signal conditioning hybrid application-specific integrated
circuit (ASIC). The performance of the angular rate sensor is degraded by a
ir damping, so the sensor element is housed in a high vacuum chamber for a
high quality (Q) factor. The angular rate sensor has an active structure el
ement less than 1 mm(2) in size and shows a noise equivalent signal of 0.1
deg/s.