Sy. Yoon et al., A high-performance polycrystalline silicon thin-film transistor using metal-induced crystallization with Ni solution, JPN J A P 1, 37(12B), 1998, pp. 7193-7197
A new fabrication process for polycrystalline silicon (poly-Si) thin-film t
ransistors (TFTs) on glass substrate is reported. Amorphous silicon (a-Si)
was crystallized by metal-induced crystallization (MIC) using a Ni solution
for low-temperature crystallization. The a-Si film spin-coated with a 5000
ppm Ni solution was fully crystallized at 500 degrees C. The poly-Si TFT m
ade of the poly-Si exhibited a field-effect mobility of 105 cm(2/)Vs and a
threshold voltage of -4 V. The high performance of the poly-Si TFT appears
to be due to the absence of intragrain microdefects in the poly-Si, which i
s confirmed from the plane-view TEM image.