Optical properties of InGaN/GaN quantum wells with Si doped barriers

Optical properties of InGaN/GaN multi-quantum wells with Si doped barriers are studied using cw and time resolved photoluminescence (TRPL) and photolu minescence excitation (PLE) spectroscopy. The room temperature carrier life time depends strongly on the Si doping level in the quantum well barriers, decreasing from 10 ns to ins as the doping level is increased from unintent ionally doped to 5 x 10(18) cm(-3) (Si:GaN). The shift between the absorpti on edge and emission peak decreases from 220 meV to 110 meV as the doping i s increased. Temperature dependent photoluminescence measurements indicate a higher density of non-radiative centers in the undoped structures.