Investigation of arsenic desorption from GaAs(111)B surface in atmosphericpressure atomic layer epitaxy

Arsenic desorption from the GaAs (111)B surface is investigated under atmos pheric pressure using an in situ gravimetric monitoring system, which is eq uipped with a halogen transport atomic layer epitaxy (ALE) reactor and a mi crobalance system. It is shown that the growth rate decreases from > 1.0 to 0.5 molecular layer (ML)/cycle with increasing H-2 purge time after AsH3 s upply depending on the As coverage on the surface, and (111)B GaAs has thre e kinds of reconstructed surfaces in the atmospheric ALE. The atomic force microscopy (AFM) images of 100 ML grown surfaces show that atomically smoot h surfaces can be obtained on the reconstructions of (1 x 1)(LT) and (root 19 x root 19).