Gain spectrum measurement of GaInAsP/InP compressively-strained quantum-wire lasers

The gain spectral characteristics of 1.5 mu m wavelength GaInAsP/InP compre ssively-strained quantum-wire lasers with a wire width of 20 nm and 25 nm, fabricated by electron beam lithography and 2-step organometallic vapor pha se epitaxial growth, were measured at a temperature of 100 K and were compa red with those of quantum-film lasers fabricated on the same wafer. It was found for the first time that the material gain spectrum of quantum-wire la sers was narrower than that of the quantum-film laser.