Influence of the forming electrolyte on the electrical properties of tantalum and niobium oxide films: an EIS comparative study

Authors
Cavigliasso, GE Esplandiu, MJ Macagno, VA
Citation
Ge. Cavigliasso et al., Influence of the forming electrolyte on the electrical properties of tantalum and niobium oxide films: an EIS comparative study, J APPL ELEC, 28(11), 1998, pp. 1213-1219
Citations number
46
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF APPLIED ELECTROCHEMISTRY
ISSN journal
0021891X → ACNP
Volume
28
Issue
11
Year of publication
1998
Pages
1213 - 1219
Database
ISI
SICI code
0021-891X(199811)28:11<1213:IOTFEO>2.0.ZU;2-F
Abstract
The electrochemical oxidation of Ta and Nb and the dielectric behaviour of the oxide films thus formed were investigated in the following electrolytes : H2SO4, HNO3, H3PO4 and NaOH. Characterization of the films was carried ou t by means of potentiodynamic current-potential profiles tin the range 0-8 V) and electrochemical impedance spectra tin the range 0.1 Hz-100 kHz). The a.c. response of the oxide films was modelled as a single layer structure on the basis of an equivalent circuit with constant phase elements (CPE). T he dependence of the oxide resistance and oxide capacitance with potential is also reported.