Vapour growth and doping of ZnSe single crystals

The results of seeded vapour-phase free growth of ZnSe single crystals in b oth the [1 1 1] and [1 0 0] directions are presented and discussed. Optimum growth conditions were found to be essentially different for these two dir ections. The doping by In and Al from both vapour phase during the growth p rocess at T = 1180 -1240 degrees C and liquid phase by means of annealing i n liquid Zn with In or Al additions at T = 900-950 degrees C was performed. To characterize grown crystals, selective chemical etching, X-ray diffract ion rocking curve, cathodoluminescence study, atomic-emission analysis, spe cific resistance and Hall effect measurements were carried out. (C) 1999 El sevier Science B.V. All rights reserved.